In this work, we successfully deposited highly dense BaTiO3 thick films at room temperature on kovar ® substrates using aerosol deposition method (AD). As-deposited films exhibited nonferroelectric behavior due to grain size effect. Post-annealing below 800 °C released residual stress without promoting grain growth for both air and argon annealing atmospheres. Hence, it enhanced relative permittivity, electrical resistivity (10 12 Ω.cm) and reduced leakage currents (<1 µA.cm-2). Annealing at 800 and 900 °C induced significant grain growth, favoring the recovery of ferroelectric properties. Grain growth was further enhanced for argon-annealed BT films. For annealing temperatures ≥ 800 °C, both air and argon annealing induced a piezoelectric behavior, clearly evidenced by the strainfield (S-E) cycles. The 900 °C argonannealed film exhibited the highest properties, with a Pr of ~6.6 µC.cm-2 and a maximum strain of 0.04% under 10 kV.mm-1 .